【摘要】 利用Quokka2软件对以准单晶硅片为衬底的太阳电池进行模拟仿真，研究硅片厚度对不同氧含量、体寿命的准单晶硅太阳电池转换效率以及功率损耗的影响。与直拉单晶硅相比，准单晶硅成本较低，硅片内缺陷较多、氧含量较低。通过将准单晶硅片应用于钝化发射极和背面电池（PERC）以及叉指背电极接触电池（IBC），比较硅片在不同电池结构下的光伏性能。结果表明：随着硅片厚度从150μm降到70μm,Shockley-Read-Hall(SRH)复合损耗也随之降低，最高可达1.14 mW/cm~2，但同时短路电流密度的下降也有0.95 mA/cm~2，相互影响下电池转换效率仍有一定的提升。薄片化准单晶硅PERC太阳电池转换效率可达23.04%；薄片化准单晶硅IBC太阳电池转换效率可达23.73%。更多还原

【Abstract】 Quokka2 software was used to simulate solar cells with quasi-single crystalline silicon as substrate, and the effect of silicon thickness on the conversion efficiency and power loss of quasi-single crystalline silicon solar cells with different oxygen content and bulk lifetime was studied. Compared with Czochralski monocrystalline silicon, quasi-single crystalline silicon has lower cost, more defects and lower oxygen content. By applying quasi-single crystalline silicon to passivated emitter and back contact cells(PERC) and interdigitated-back contact cells(IBC), the photovoltaic performance of quasi-single crystalline silicon wafers in different cell structures was compared. The results show that the Shockley-Read Hall(SRH) composite loss also decreases up to 1.14 mW/cm~2 with the thickness of the silicon wafer dropping from 150 μm to 70 μm, but the short circuit current decreases by 0.95 mA/cm~2 at the same time, and the cell conversion efficiency is still improved to some extent under the mutual influence. Under thinning, the conversion efficiency of quasi-single crystalline PERC solar cell can reach 23.04%. The conversion efficiency of quasi-single crystalline IBC solar cell can reach 23.73%.更多还原