【摘要】 针对现有温度测试技术难以满足GaN器件寿命、可靠性以及热管理控制对沟道温度精确评估的需求，开展基于微区拉曼法测定AlGaN/GaN高电子迁移率晶体管（HEMT）的沟道温度的研究。使用拉曼系统测量GaN材料的E₂声子频率特征峰来确定沟道温度。通过使用洛伦兹拟合方法，提高拉曼测试结果精度。对微区拉曼法和红外热成像法测量器件结温进行量化研究，器件的直流输出功率密度分别为6、8、10 W/mm时基于微区拉曼法测得的GaN器件沟道温度分布为140.7、176.7、213.6℃；基于红外热成像法测得的温度分布为132.0、160.2、189.8℃。其测试精度相对红外法分别提升6.6%,10.3%和12.5%，同时尝试探索沟道深度方向的温度测量，实现沟道下3μm的温度测量，结果表明微区拉曼法有更高的测试精度，对器件结温的测量与评估以及热管理技术的提升都有重要意义。更多还原

【Abstract】 In view of the fact that the existing temperature testing technology is difficult to meet the needs of GaN device lifetime, reliability and thermal management control accurate evaluation of the channel temperature, research on measurement of the channel temperature of AlGaN/GaN high electron mobility transistor（HEMT） based on micro Raman method was carried out. The channel temperature was determined by measuring the E₂ phonon frequency characteristic peak of the GaN material using a Raman system. Improve the precision of Raman testing results by using the Lorentzian fitting method. The junction temperature of the device measured by the micro Raman method and infrared thermal imaging method was quantitatively studied.When the DC output power density of the device was 6, 8, and 10 W/mm, the channel of the GaN device was measured based on the micro-Raman method, the temperature distributions were 140.7,176.7 and 213.6℃;respectively, the temperature distributions measured based on infrared thermal imaging were 132.0,160.2 and 189.8℃. Compared with the infrared method, the testing precision has been improved by 6.6%, 10.3% and 12.5%. At the same time, the temperature measurement in the depth direction of the channel has been explored,and the temperature measurement of 3 μm under the channel has been achieved. The results show that the micro Raman method has higher testing precision, it is of great significance to the measurement and evaluation of device junction temperature and the improvement of thermal management technology.更多还原