【摘要】 热丝化学气相沉积法沉积区域可达12英寸(30.48 cm)，其具备大批量生产单晶金刚石的潜力。采用尺寸为3 mm×3 mm×1 mm,(100)取向的单晶金刚石为基体，利用热丝化学气相沉积法以甲烷和氢气为前驱体，同时通入少量氮气进行同质外延生长。结果表明，在热丝温度为2 200℃、碳源浓度为4%、腔体气压为4 kPa的条件下，单晶金刚石以3.41μm/h的速度生长，表面无多晶、破口、孔洞等缺陷；外延层X射线衍射光谱在(400)面处峰值的半高宽为0.11°，低于基体的半高宽0.16°，证明外延层具有较高的晶体质量；氮气的引入可以提升单晶金刚石的生长速度，同时降低外延层的晶体质量，较高的氮气浓度还会使得单晶金刚石的生长模式转为岛状生长。更多还原

【Abstract】 The deposition area of the hot filament chemical vapor deposition(HFCVD) method can reach 12 inches,which has the potential to produce larger-sized single crystal diamonds. In this study, single crystal diamond with a size of 3 mm × 3 mm × 1 mm and(100) orientation was used as the substrate. Homoepitaxial growth was carried out using the HFCVD method with methane and hydrogen as precursors, and a small amount of nitrogen gas. The results show that under the conditions of a filament temperature of 2 200 °C, a carbon source concentration of 4%, and a chamber pressure of 4 kPa, single crystal diamond grows at a rate of 3.41 μm/h. The surface of the diamond exhibits no defects such as polycrystals, cracks, or holes. The full width half maximum(FWHM) of the epitaxial layer’s X-ray diffraction spectrum at the(400) peak is 0.11°, which is lower than that of the substrate at 0.16°, indicating that the crystal quality of the epitaxial layer is higher than that of the substrate. The introduction of nitrogen can increase the growth rate of single crystal diamond, although it reduces the crystal quality of the epitaxial layer. A higher nitrogen concentration can also shift the growth mode of single crystal diamond change to island growth.更多还原