【摘要】 Ⅲ-Ⅴ族有源器件及其与无源器件的高效耦合集成是硅光子技术得以进一步发展的核心。将高性能的Ⅲ-Ⅴ族有源器件通过异质外延集成在硅片上，可以实现晶圆级硅光子集成电路，从而以低成本、高通量、大带宽和大规模集成来充分发挥硅光子的优势。从侧向选区外延硅基Ⅲ-Ⅴ族有源器件方面展开，重点介绍硅基Ⅲ-Ⅴ族激光器和光电探测器的实现及其与硅无源器件的共平面高效光耦合。讨论其无缓冲层、面内结构、横向堆叠有源区等特点，并展望该技术的发展前景。更多还原

【Abstract】 Ⅲ-Ⅴ active devices and their efficient coupling and integration with passive components are crucial for the further development of silicon photonics. Heteroepitaxy for integrating efficient Ⅲ-Ⅴ lasers on silicon can enable waferscale silicon photonic-integrated circuits, maximizing the benefits of silicon photonics at low cost, high throughput, large bandwidth, and large-scale integration. This article examines Ⅲ-Ⅴ active devices on silicon-on-insulator(SOI) via lateral selective epitaxy, focusing on the integration of Ⅲ-Ⅴ lasers and photodetectors on SOIs and their efficient in-plane coupling with silicon-based passive components. This article discusses their unique characteristics, including bufferless, inplane configurations and laterally stacked active regions, as well as their future development prospects.更多还原