【摘要】 本文介绍了一种通过在铌酸锂薄膜平台上使用亚波长光栅结构实现高偏振消光比的方法，并在铌酸锂薄膜的表面形成了芯片。该芯片的长度仅为20μm，在1 550 nm波长下测得的偏振消光比为29 dB。这一进展不仅证明了在铌酸锂薄膜平台上实现高偏振消光比的可能性，而且为未来在偏振分束器、集成光纤陀螺仪等方面的工作提供了重要的技术参考。更多还原

【Abstract】 This article introduces a method of achieving high polarization extinction ratio using a subwavelength grating structure on a lithium niobate thin film platform, and the chip is formed on the surface of the lithium niobate thin film. The chip, with a length of just 20 μm, achieved a measured polarization extinction ratio of 29 dB at 1 550 nm wavelength. This progress not only proves the possibility of achieving a high extinction ratio on a lithium niobate thin film platform, but also offers important technical references for future work on polarization beam splitters, integrated fiber optic gyroscopes, and so on.更多还原