【摘要】 本文通过分析耗尽型GaN器件kink效应，基于ASM-HEMT提出了一种改进模型。该模型考虑到漏源电压、栅源电压与kink效应的关系，不仅能够准确模拟电流崩塌和kink效应发生时的漏源电流趋势，而且精准拟合了不同栅源电压下kink效应发生时对应的漏源电压值V_ds-k，表明改进模型能够准确表征GaN器件在整个工作电压范围内的直流特性，拟合误差在3%以内。为了验证改进模型的精确度，利用ADS负载牵引仿真电路进行了模型仿真，仿真结果显示，改进模型最佳效率匹配时的功率附加效率精确度比原始ASM-HEMT模型提高了4%。更多还原

【Abstract】 With the analysis of experiment and theory on GaN HEMT devices under DC sweep, an improved model for kink effect based on advanced SPICE model for high electron mobility transistors(ASM-HEMT) is proposed, considering the relationship between the drain/gate-source voltage and kink effect. The improved model can not only accurately describe the trend of the drain-source current with the current collapse and kink effect, but also precisely fit different values of drain-source voltages at which the kink effect occurs under different gatesource voltages. Furthermore, it well characterizes the DC characteristics of GaN devices in the full operating range, with the fitting error less than 3%. To further verify the accuracy and convergence of the improved model, a load-pull system is built in ADS. The simulated result shows that although both the original ASM-HEMT and the improved model predict the output power for the maximum power matching of GaN devices well, the improved model predicts the power-added efficiency for the maximum efficiency matching more accurately, with 4% improved.更多还原