【摘要】 本文设计并制作了f_T>400 GHz的In_0.53Ga_0.47As/In_0.52Al_0.48As铟磷高电子迁移率晶体管（InP HEMT）。采用窄栅槽技术优化了寄生电阻。器件栅长为54.4 nm，栅宽为2×50μm。最大漏极电流I_DS.max为957 mA/mm，最大跨导g_m.max为1 265 mS/mm。即使在相对较小的V_DS=0.7 V下，电流增益截止频率f_T达到了441 GHz，最大振荡频率f_max达到了299 GHz。该器件可应用于太赫兹单片集成放大器和其他电路中。更多还原

【Abstract】 In this letter,an In_0.53Ga_0.47As/In_0.52Al_0.48As InP-based HEMT with f_T>400 GHz was designed and fabricated successfully.A narrow gate recess technology was used to optimize the parasitic resistances.The gate length is 54.4 nm,and the gate width is 2×50μm.The maximum drain current I_DS.max is 957 mA/mm,and the maximum transconductance g_m.max is 1 265 mS/mm.The current gain cutoff frequency f_T is as high as 441 GHz and the maximum oscillation frequency f_max reaches 299 GHz,even at a relatively small value of V_DS=0.7 V.The reported device can be applied to terahertz monolithic integrated amplifiers and other circuits.更多还原