【摘要】 具有半导体-金属态相变性质的二氧化钒材料可用于光电探测器的激光致盲防护。本文报道了基于磁控溅射法制备二氧化钒薄膜材料的结构、形貌特性，以及在不同温度下的光学性质。使用椭偏光谱法测量了20～100℃下可见-近红外波段二氧化钒材料的椭偏参数，利用Gaussian、Lorentz模型获取了薄膜在相变前的光学性质，结合Drude模型拟合获取了材料在相变后的光学特性，获取了材料在300～1 700 nm之间的变温折射率和消光系数等参数。变功率下1 550 nm红外激光透射率的实验测试研究表明，VO₂薄膜样品的相变阈值功率为12 W/cm²，相变前后透射率由51%减小到15%～17%，开关率为69%。更多还原

【Abstract】 Vanadium dioxide materials, which show semiconductor-metal phase transition, can be used for protection of photoelectric detectors against laser blinding weapons. The structure, morphology and optical properties of vanadium dioxide thin films prepared by radio frequency magnetron sputtering at different temperatures were reported. The visible to infrared ellipsometric parameters of vanadium dioxide film at 20-100 ℃ were measured by an ellipsometer. The optical properties of vanadium dioxide films before the phase transition were obtained by Gaussian and Lorentz model, and the optical properties after the phase transition were obtained by adding a Drude model. The refractive index and extinction coefficient at varied temperatures between 300 nm and 1 700 nm were obtained. The transmittance spectra of 1 550nm infrared laser at varied power densities show that the threshold power of phase transformation for the VO₂ film is about 12 W/cm², where the transmittance decreases sharply from 51% to 15%-17%, and the switching rate is about 69%.更多还原