【摘要】 Micro-LED作为一种新型的显示技术，具有对比度高、响应快及寿命长等优点，已成为当前研究的热点。然而，尽管潜力巨大，Micro-LED技术的商业化之路仍面临诸多技术上的挑战与瓶颈。本文旨在探讨高亮绿光氮化镓基Micro-LED微型显示器的制备过程及其相关技术。基于WVGA041全数字信号电路CMOS硅基驱动电路，制作了0.41 inch、分辨率为800×480的主动式单色绿光Micro-LED微型显示器。利用高精度倒装焊接技术实现了CMOS驱动电路与LED发光芯片的电气连接。结果表明，制备出LED显示芯片正常启亮电压为2.8 V,EL光谱峰值波长524 nm；在硅基CMOS电路驱动范围内，Micro-LED微型显示器在5 V电压下，器件亮度为108000 cd/m~2（最大亮度可达250000cd/m~2），电流密度达到0.61 A/cm~2时色坐标为(0.175,0.756)。当电流密度从0.3 A/cm~2增加到1.3 A/cm~2时，色坐标从(0.178,0.757)变化到(0.175,0.746)，器件的色稳定性能够满足实际应用要求。更多还原

【Abstract】 Micro-LEDs are a new display technology with advantages including high contrast,fast response,and long lifetimes.Micro-LEDs are currently regarded as an active topic of research.Micro-LED display technology is a promising industry,but its commercialization faces many technical challenges and bottlenecks.This study explores the diode preparation process and related technologies for high-brightness,green-light,GaN-based micro-LED micro-displays.Monochrome green micro-LEDs with resolutions of800×480 and 0.41 in were fabricated based on the CMOS driver circuit of an all-digital signal circuit.The CMOS driver circuit was connected to an LED chip via high-precision flip bonding.The experimental results showed that the turn-on voltage of the LED was 2.8 V and that the peak wavelength of the electroluminescence spectrum was 524 nm.The maximum brightness of the device can reach 250,000 cd/m~2within the normal driving range of silicon-based CMOS circuits,and the brightness can reach 108,000 cd/m~2at 5 V.When the current density was controlled at 0.61 A/cm~2,the CIE coordinates were (0.175,0.756).When the current density was increased from 0.3 A/cm~2 to 1.3 A/cm~2,the CIE coordinates changed from(0.178,0.757) to (0.175,0.746).The color stability of the device met the requirements for practical applications.更多还原