【摘要】 微型阵列束闸是多束电子束曝光系统的关键部件，用于控制多束电子束的开/关，实现复杂图形的快速曝光。对3×3微型阵列束闸进行了设计与制作，并进行了多束电子束偏转实验研究。对阵列束闸结构进行了优化设计，并基于MEMS加工工艺成功制备了阵列束闸。针对阵列束闸的控制要求，设计了可单独控制的阵列束闸控制器。将控制器与阵列束闸进行连接，验证了控制器的偏转速度与功能完整性。最后，在多束电子束测试平台对阵列束闸进行了偏转实验，研究串扰对电子束偏转的影响。实验结果表明：阵列束闸控制器的偏转速度达到43.5 MHz，大于设计值10 MHz；阵列束闸成功实现了单独控制电子束开和关，束闸的偏转距离在25～30μm之间，小于计算值43.29μm；串扰程度均小于3%。该阵列束闸已经具备多束电子束开/关控制功能，但在偏转精度，设计和加工工艺等方面还需进一步优化和完善。更多还原

【Abstract】 The micro-arrayed beam blanker is essential for the multi-beam electron beam lithography system, enabling the rapid exposure of complex graphics by controlling the electron beam′s opening and closing. In this study, a 3×3 micro-arrayed beam blanker was designed and fabricated, followed by an experiment on multi-beam electron beam deflection. Based on prior optimization, the structural design and MEMS-based processing technology were developed, resulting in successful fabrication of the beam blanker. A controller capable of independently managing the multi-beam was then created and connected to the beam blanker to validate its deflection speed and functionality. The deflection experiment conducted on a multi-beam test platform examined crosstalk effects. Results indicate that the controller′s deflection speed reaches 43.5 MHz, exceeding the design target of 10 MHz. The beam blanker independently opens and closes the electron beam, with a deflection range of 25-30 μm, which is below the predicted 43.29 μm.Crosstalk levels were all under 3%. While the designed micro-arrayed beam blanker effectively controls the multi-beam electron beam, further optimization is needed for deflection accuracy and processing technology.更多还原