【摘要】 GaN器件大功率及高功率密度的发展受限于其自生热和近结区散热能力引起的器件结温升高问题，导致器件性能严重下降，GaN器件的大功率潜能远未得到发挥，金刚石近结集成热管理技术是解决GaN器件热瓶颈的重要途径。本文详细论述GaN器件近结热管理技术的重要性，并对近年来国际上正在开展的金刚石近结散热技术方法进行系统分析和评述，揭示了金刚石与GaN器件近结集成工艺途径及面临的技术挑战，阐述了GaN器件金刚石近结集成热管理的技术现状和发展方向。更多还原

【Abstract】 The development of high power and high-power density for GaN devices is limited by the synergism of self-heating effect and heat dissipation capabilities in the near junction region, which leads to an increase in device junction temperature and a serious decline in device performance. As a result, the high-power potential of GaN devices has not been fully realized. Diamond near-junction integrated thermal management technology is an important way to solve the thermal bottleneck of GaN devices. The importance of near junction thermal management technology for GaN devices is dissipation in detail, the research progress of foreign advanced diamond near junction heat dissipation technology are analyzed and evaluated systemically in this paper. Meanwhile, the integrated process approach and technical challenges of the integration between diamond and near junctions of GaN devices are expounded, and the state and direction of diamond near junction integrated thermal management technology for GaN devices is also explained.更多还原