【摘要】 近年来，太赫兹频段作为下一代6G通信技术的备选频段受到了广泛关注，太赫兹也成为研究热点。太赫兹集成电路（芯片）是推动各种太赫兹应用系统快速发展的关键。随着硅基工艺的特征频率/最大振荡频率(f_T/f_max)不断提高，采用低成本硅基工艺，在太赫兹频段实现全集成的硅基太赫兹发射机成为可能。本文简要综述了基于硅基工艺的太赫兹发射机芯片技术的重要研究进展，包括150 GHz直接上变频发射机芯片、220 GHz滑动中频超外差发射机芯片，以及D波段直接调制发射机芯片。实验测试验证了太赫兹频段在高速通信应用中的优势，硅基太赫兹收发集成电路有望成为6G系统中突破高速数据速率需求的关键技术。更多还原

【Abstract】 In recent years, the terahertz frequency band has garnered extensive attention as an alternative frequency band for the next-generation 6G communication technology, and terahertz has thus emerged as a research focus. Terahertz integrated circuits（chips） are crucial for facilitating the rapid development of various terahertz application systems. With the continuous enhancement of characteristic frequency and maximum oscillation frequency(f_T/f_max) of silicon-based processes, it becomes feasible to achieve fully integrated silicon-based terahertz transmitters in the terahertz frequency band using silicon-based processes. This article briefly reviews significant research advancements in terahertz transmitter chip technologies based on silicon-based processes, including 150 GHz direct up conversion transmitter chips, 220 GHz sliding intermediate-frequency superheterodyne transmitter chips, and D-band direct modulation transmitter chips. Experimental results have verified the advantages of the terahertz frequency band in high-speed communication applications. Silicon-based terahertz transceiver integrated circuits are expected to be the key technology for breaking through the requirements of high data rates in 6G systems.更多还原