【摘要】 基于0.15μm GaAs E-pHEMT工艺设计并制备了一款0.6～18.0 GHz的低噪声放大器单片微波集成电路。该放大器使用一级共源共栅结构，通过负反馈实现宽带的匹配设计。同时在共栅晶体管栅极增加到地电容，共源管和共栅管漏极增加峰化电感，以提高高频增益，扩展带宽，改善噪声。常温在片测试结果表明，在3.3 V单电源供电下，0.6～18.0 GHz频带内该款低噪声放大器噪声系数典型值1.5 dB，小信号增益约15 dB，增益平坦度小于±0.9 dB，输入、输出电压驻波比典型值分别为1.7和1.8,1 dB压缩点输出功率典型值14 dBm，功耗72.6 mW，芯片面积1.5 mm×1.2 mm。更多还原

【Abstract】 A 0.6-18.0 GHz low noise amplifier(LNA) monolithic microwave integrated circuit(MMIC) was designed and fabricated based on 0.15 μm GaAs E-pHEMT process. The amplifier used a single-stage common source common gate structure and achieved broadband matching design through negative feedback. At the same time, a ground capacitor was added to the gate of the common gate transistor and peak inductors were added to the drains of both of the common source transistor and the common gate transistor, to improve high-frequency gain, expand bandwidth, and improve noise factor. The on-wafer test results at room temperature show that under a 3.3 V single power supply, the typical noise figure of this LNA in the 0.6-18.0 GHz frequency band is 1.5 dB, the small signal gain is about 15 dB, the gain flatness is less than ±0.9 dB, and the typical values of the input and output voltage standing wave ratios are 1.7 and 1.8, respectively. The typical value of the output power at 1 dB compression point is 14 dBm, the power consumption is 72.6 mW, and the chip area is 1.5 mm×1.2 mm.更多还原