【摘要】 金属功函数波动作为器件制造过程中的主要工艺波动源之一，其波动变化对器件电学特性有极大的影响。本文提出一种简便、快速预测半导体场效应管金属功函数波动效应的方法，并将其与商业软件中计算功函数波动的统计阻抗场法进行对比分析。参考IBM公司发布的14 nm SOI FinFET结构建立FinFET器件仿真模型并与实验数据对比验证后，引入金属功函数波动，分别用统计阻抗场法与本文提出的快速预测方法计算得到对应随机波动下模型的阈值电压V_th、关断电流I_off、工作电流I_on等电学特性参数的随机分布及这些参数结果的期望值、标准差、极差等统计参数，通过两者结果对比验证了快速预测方法的准确性。更多还原

【Abstract】 Metal workfunction fluctuations, as one of the main sources of process fluctuations in device manufacturing, had a significant impact on the electrical characteristics of devices. This article proposed a simple and fast method for predicting the fluctuation effect of metal work function in semiconductor field-effect transistors, and compared it with the statistical impedance field method by commercial software to calculate workfunction fluctuations. This article referred to the 14 nm SOI FinFET structure released by IBM to establish the FinFET device simulation model and verified it with experimental data. The fluctuation of metal work-function was introduced, and the random distribution of electrical characteristic parameters was calculated, such as threshold voltage V_th, turning off current I_off, working current I_on and the statistical parameters of these random distribution. The accuracy of the proposed fast prediction method is verified through the comparison of these results.更多还原