【摘要】 电子电力技术的高度集成化对承载电子元器件的脆性陶瓷基板提出了更高的散热和强度要求。氮化硅陶瓷兼备优异的本征热导率和力学性能，在大功率半导体器件封装领域有广阔的发展前景。然而，目前商业及实验中可实现的氮化硅热导率远低于其本征热导率，如何在保证氮化硅优异力学性能的基础上提高热导率仍然是一个难题。本文概述了高热导氮化硅的发展近况，着重论述氮化硅实际热导率的影响因素和提高方法。同时对比了几种氮化硅烧结工艺的优劣情况，并简要介绍目前主流商业化的氮化硅陶瓷基板成型工艺，最后对氮化硅陶瓷基板发展方向作出展望。更多还原

【Abstract】 The high degree integration of electronic power technology has put forward higher requirements for heat dissipation and strength of brittle ceramic substrates carrying electronic components. Due to its excellent intrinsic thermal conductivity and mechanical properties, silicon nitride ceramics have broad development prospects in the field of high-power semiconductor device packaging. However, the thermal conductivity of Si₃N₄ that can be achieved in commercial and experimental studies is much lower than its intrinsic thermal conductivity, and how to improve the thermal conductivity of Si₃N₄ on the basis of ensuring its excellent mechanical properties is still a difficult problem. In this paper, the recent development of high thermal conductivity silicon nitride is summarized, and the influencing factors and improvement methods of the actual thermal conductivity of Si₃N₄ are emphatically discussed. At the same time, the advantages and disadvantages of several Si₃N₄ sintering processes are compared, and make a brief introduction of the current mainstream commercial Si₃N₄ ceramic substrate molding process. The development direction of Si₃N₄ ceramic substrate is prospected finally.更多还原