【摘要】 为解决半导体激光器的偏振问题,提出了一种利用泰尔博特位移光刻曝光技术在Ga As衬底上制作周期光栅的方法,并系统研究了工艺参数和抗反射层对制备的周期光栅质量的影响。利用二次光刻工艺和反应离子蚀刻工艺在Ga As衬底上制备圆孔阵列周期光栅;通过电感耦合等离子体蚀刻设备制造均匀光栅。实验结果表明,该工艺流程可制备深度为20～150 nm的动态可调圆孔阵列周期光栅;当曝光剂量为30 m J·cm^-2,曝光光强度为2 m W·cm^-2,显影时间为1 min时,所曝光出的周期光栅符合实验要求;重复实验证明了利用泰尔伯特位移光刻技术制备光栅工艺的可行性及稳定性。更多还原

【Abstract】 To solve the polarization problem of semiconductor laser,a method of fabricating periodic gratings on Ga As substrates by displacement Talbot lithography（DTL）exposure technology is proposed,and the influence of process parameters and anti-reflection layer on the quality of the exposed periodic gratings is systematically studied.The secondary photolithography process and the reactive ion etching process are used to prepare the circular hole array periodic grating on the Ga As substrate;the uniform grating is manufactured by inductively coupled plasma etching（ICP）equipment.Experimental results show that this process can prepare a dynamic adjustable circular hole array periodic grating with a depth of 20-150 nm;when the exposure dose is 30 m J·cm^-2,the exposure light intensity is 2 m W·cm^-2,and the development time is 1 min,the exposed periodic grating meets the experimental requirements;Repeated experiments proved the feasibility and stability of using DTL to prepare the grating process.更多还原