【摘要】 小间距下制备铟凸点阵列时，常出现铟凸点高度较低、均匀性较差的情况。文中研究了小间距条件下热蒸镀过程中光刻工艺所形成的光刻胶孔径对于铟凸点沉积质量所带来的影响，并选取了合适的光刻和蒸镀参数，在8μm间距的Micro-LED芯片上成功制备了高度为4μm的铟凸点阵列。实验表明，铟凸点的高度随光刻过程中形成的光刻胶孔径的增大而增大，增长率随之降低。在5μm大小的光刻胶孔径下制备得到的铟凸点阵列高度较高且均匀性较好。更多还原

【Abstract】 When preparing indium bump arrays at small spacing, the indium bump height is low and the uniformity is poor. In this paper, the influence of the photoresist aperture formed by the photolithography process during hot evaporation under the condition of small pitch on the quality of indium bump deposition was studied, and the indium bump array with a height of 4 μm was successfully prepared on a Micro-LED chip with a pitch of 8 μm by selecting appropriate lithography and evaporation parameters. Experiments showed that the height of the indium bump increased with the increase of the aperture of the photoresist formed during the lithography process, and the growth rate decreased accordingly. The indium bump arrays prepared under the photoresist aperture of 5 μm were of high height and great uniformity.更多还原