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Dy2O3掺杂抗还原纳米BaTiO3基陶瓷性能研究
Characteristics of Dy2O3-doped non-reducible nano BaTiO3-based ceramics
【摘要】 采用传统固相合成法制备了BaTiO3-SrCO3-MgCO3-Mn3O4-xDy2O3-ZrO2-SiO2陶瓷,其中x的取值范围为摩尔分数0~0.8%。该系列陶瓷以1320℃的温度在1%H2+99%N2混合还原气氛中烧结。系统研究了Dy2O3掺杂对纳米BaTiO3基陶瓷的晶格变化、晶粒生长和介电性能的影响。结果表明,掺杂适量的Dy2O3有助于提升BaTiO3陶瓷材料的介电常数、绝缘电阻率以及Tc峰值。最终,掺杂摩尔分数0.2%Dy2O3的BaTiO3陶瓷样品表现出了高介电常数(εr=2914)、良好的绝缘电阻率(ρv=1.94×1011Ω·cm)和低介质损耗(tanδ=0.7%),且其温度特性符合EIA X7R标准(-55~125℃,ΔC/C25℃≤±15%),表现出作为纳米BaTiO3基电容器陶瓷材料的良好应用潜力。
【Abstract】 BaTiO3-SrCO3-MgCO3-Mn3O4-xDy2O3-ZrO2-SiO2 ceramics were prepared by traditional solid phase synthesis method,where the value of x ranges from 0 to 0.8%(mole fraction).This series of ceramics was sintered at 1320℃in the 1%H2+99%N2 mixed reducing atmosphere.The effect of Dy2O3 doping on the lattice change,grain growth and dielectric properties of nano-BaTiO3-based ceramics was systematically studied.The results show that doping with an appropriate amount of Dy2O3 helps to improve the dielectric constant,insulation resistivity and Tc peak of BaTiO3 ceramic materials.Finally,the BaTiO3 ceramic sample doped with 0.2%Dy2O3 exhibits a high dielectric constant(εr=2914),good insulation resistivity(ρv=1.94×1011Ω·cm)and low dielectric loss(tanδ=0.7%),and its temperature characteristics meets the EIA X7R standard(-55-125℃,ΔC/C25℃≤±15%),showing good application potential as a nano-BaTiO3-based capacitor ceramic material.
【Key words】 nano-barium titanate; non-reducible; Dy2O3; high dielectric constant; temperature stability;
- 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2024年10期
- 【分类号】TQ174.1;TM534.1
- 【下载频次】23