【摘要】 NO₂作为机动车尾气和工业排放中最常见的污染物之一，其预警监测对于环境与人体健康有着重要意义。工业生产与人民生活的智能化趋势对传感器在高性能、微型化、集成化等方面提出了更高要求。场效应管作为一种重要的电学器件结构，由于与MEMS工艺兼容，在器件的小型化和集成化方面具有巨大优势，因而基于新结构与新材料开发高性能场效应管型NO₂传感器具有重要研究价值。本工作通过水热法合成了碲纳米带沟道材料，通过表征证实了材料的条带状形貌与单晶结构，并在此基础上完成了碲基场效应管的制备。为进一步提升器件的响应特性，对沟道表面进行了金修饰，并对比测试金修饰前后的气敏特性。金修饰后器件响应恢复速率加快，基线漂移得到改善，检测下限拓宽至100ppb,同时传感器表现出良好的选择性与重复性。从载流子迁移、Au与Te的金属-半导体接触、器件比表面积与化学吸附氧的作用几个角度对气敏机理进行分析，建立了碲基场效应管型NO₂传感器敏感机理模型。本工作为场效应管型有毒有害气体传感器的设计制备与增敏提供了一种有效策略。更多还原

【Abstract】 NO₂ is one of the most common pollutants in the vehicle exhaust and industrial emissions, whose detection is of great significance for the environment and human health. The intelligent trend of the industrial production and everyday life has put forward high requirements for sensors in terms of performance, miniaturization and integration. As an important electrical device structure, field effect transistors（FETs） have great advantages in the miniaturization and integration of the devices due to its compatibility with MEMS process. Therefore, it is of great research value to develop high-performance MOSFET NO₂ sensor based on new structures. In this work, tellurium nanoribbon channel material was synthesized by hydrothermal method, the microstructure characterizations were applied to confirm the strip morphology and single crystal structure of the material. Based on this, the tellurium-based FET was prepared. In order to further improve the response characteristics of the device, Au modification was applied to the channel area, and the gas sensing characteristics of the device before and after the modification were compared.After Au modification, the response and recovery rate of the device was accelerated, the baseline drift was improved, and the detection limit was broadened to 100 ppb, indicating good selectivity and repeatability of the device. The gas sensing mechanism was analyzed from the perspectives of the carrier migration, metal-semiconductor contact, superfacial area as well as chemisorbed oxygen, and the sensing mechanism of tellurium-based FET NO₂ sensor was established. Our work provides an effective strategy for the design, fabrication and sensitization of the MOSFET tube toxic and harmful gas sensors.更多还原