【摘要】 GaN高电子迁移率晶体管（HEMT）已在电力电子的诸多领域得到广泛应用，但需要解决高功率密度带来的热瓶颈问题。反射热成像是一种具有高空间分辨率的全场温度成像技术，适用于捕捉HEMT的运行温度，从而制定合适的热管理策略。利用反射热成像系统对6种GaN HEMT的场板和漏极温度分布进行了测试，实验与仿真结果偏差在6%以内。通过热阻分析比较了不同衬底厚度和外延设计对器件热特性的影响，衬底热阻占总热阻的比例超过40%，将衬底厚度从100 μm减薄至60 μm，热阻降低8.1%，衬底减薄对于热阻的降低影响显著程度高于外延设计变更。上述结果凸显了反射热成像方法用于指导器件热优化的重要性。更多还原

【Abstract】 GaN high electron mobility transistors(HEMTs) have been widely used in various fields of power electronics, but the thermal bottleneck caused by high power density needs to be solved. Thermoreflectance thermal imaging emerges as a technique with high spatial resolution for temperature mapping, and it is suitable for capturing the operational temperature of HEMTs to formulate appropriate thermal management strategies. Temperature distributions of the field plate and drain of six types of GaN HEMTs are tested by thermoreflectance thermal imaging system, and the deviation between experimental and simulation results is within 6%. Thermal resistance analysis is used to compare the effects of different substrate thicknesses and epitaxial designs on thermal performance of devices. The thermal resistance of substrate accounts for more than 40% of the total thermal resistance. When the thickness of substrate is reduced from 100 μm to 60 μm,the thermal resistance is reduced by 8.1%, and the impact of substrate thinning on the reduction of the thermal resistance is significantly greater than that of epitaxial design changes. These above results highlight the importance of thermoreflectance thermal imaging method for guiding thermal optimization of devices.更多还原