【摘要】 创新地开展p型栅GaN器件的单粒子辐照与建模研究，提取的单粒子激励电流被加载用于全GaN的低压差线性稳压器（LDO）稳压电路的单粒子设计中，获得了该电路单粒子敏感节点，最终得到该节点在重载状态与轻载状态时对应的单粒子瞬态（SET）响应分别为500 m V/60 ns,1 210 m V/60 ns。上述研究建立起GaN器件-全GaN基电路的T-CAD/SPICE单粒子效应协同设计方法。更多还原

【Abstract】 Single event irradiation and modeling of p-gate GaN devices are innovatively carried out. The extracted single event excitation current is used into the single event design of a full GaN low dropout regulator(LDO) voltage stabilizing circuit, and a single event sensitive node of the circuit is obtained. The single event transient(SET) responses of the node corresponding to the heavy load state and the light load state are 500 m V/60 ns and 1 210 m V/60 ns respectively. The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.更多还原