【摘要】 在绝缘栅型双极性晶体管（IGBT）的结温监测方法中，温敏参数法因具有响应速度快、成本低、易于在线检测的特点而受到广泛关注。已有研究表明，温敏参数中的阈值电压(V_TH)具有良好的温度性质，但对其采用直接测量的方法易受电流振荡影响。为此，提出了一种在阻感负载下基于米勒平台的阈值电压间接计算法。首先描述阻感负载下IGBT的开关瞬态过程，论述V_TH间接计算法的理论基础。然后通过开关过程中的米勒平台电压值间接计算V_TH。最后通过实验证明了所提方法的有效性。更多还原

【Abstract】 Among the junction temperature monitoring methods of insulated gate bipolar transistor（IGBT）,the temperature-sensitive parameter method has attracted wide attention because of its fast response speed,low cost and easy on-line detection.Previous studies have shown that the gate threshold voltage(V_TH)among the temperaturesensitive parameters has good temperature properties,but it is easily affected by current oscillation by direct measurement.Therefore,an indirect calculation method of threshold voltage based on Miller platform under resistive load was proposed.Firstly,the switching transient process of IGBT under resistive load was described,and the theoretical basis of V_THindirect calculation method was discussed.Then,the V_THwas calculated indirectly by the voltage value of Miller platform in the switching process.Finally,the effectiveness of the method was proved by experiments.更多还原