【摘要】 碳化硅作为第三代半导体的代表，具有宽禁带、饱和电子漂移速度快等特性，在高温以及大功率器件等领域具有应用前景。由于溶液法SiC晶体生长过程接近热力学平衡，生长时会发生TSDs与TEDs向BPDs或SFs转换，并随着生长的进行从晶体边缘排出，从而实现SiC的低位错密度、高质量生长，因此吸引了大量科研工作者对溶液法生长SiC的工艺与机理进行研究。本文对溶液法生长SiC的位错转换研究现状进行了总结，汇总了影响位错转换的因素，介绍了不同位错转换行为的差异以及利用位错转换机制生长高质量SiC的方式，最后对未来溶液法制备SiC的发展前景进行了展望。更多还原

【Abstract】 As a representative of third-generation semiconductors, silicon carbide possesses exceptional properties such as a wide band gap and high saturated electron drift speed, making it highly promising for applications in high-temperature and high-power devices. Due to the growth process of SiC crystals by solution method being close to thermodynamic equilibrium, dislocation conversion occurs during crystal growth,significantly reducing the dislocation density of growing crystals. Consequently, numerous scientific researchers are drawn to investigate the process and mechanism of SiC crystals grown via the solution method. This paper provides a summary of the research status regarding dislocation conversion in SiC grown by the solution method, outlines factors influencing this transformation, discusses different behaviors exhibited during dislocation conversion, explores ways to utilize this mechanism for growing high-quality SiC crystals, and offers prospects for future developments in SiC preparation using the solution method.更多还原