【摘要】 金刚石是超宽禁带半导体材料的代表之一，具有禁带宽度大、热导率高、载流子迁移率高、电子饱和漂移速度快、抗辐射性能好等优异性质，在功率器件、量子信息、辐射探测等高科技领域的应用越来越广泛。然而，与其他成熟的半导体材料如Si的零位错、SiC的螺位错（TSD）低于10²cm^-2相比，金刚石单晶的位错密度处于10³～10⁸cm^-2,这是其器件性能未能充分发挥的原因之一。研究位错机理和降低位错也是现阶段金刚石研究的热点之一。本文汇总分析了金刚石单晶中位错的主要类型和位错产生原因，重点讨论了金刚石位错的表征技术、位错密度降低方法以及位错的存在对不同器件性能的影响，最后总结了金刚石当前所面临的机遇和挑战，并展望了金刚石未来发展方向。更多还原

【Abstract】 Diamond is one of well-known ultra-wide band gap semiconductor materials.It has excellent properties such as wide band gap, high thermal conductivity, high carrier mobility, high electron saturation drift velocity, and good radiation resistance.The progresses of diamond technology in recent decades has opened doors for the application for high-tech fields such as power devices, quantum information, and radiation detection.However, compared with other mature semiconductor materials such as Si with zero dislocation and SiC which TSD dislocation less than 10² cm^-2,the dislocation density of diamond single crystal is in the range of 10³—10⁸ cm^-2,that lead to its performance far lower than the theoretical value.Nowadays the dislocation mechanism and reducing dislocation is of acute interest.In this paper, the main types of dislocations in diamond single crystals and the induced causes of dislocations are introduced.The characterization methods of diamond dislocations, the approaches of reducing dislocation density and the influence of dislocations on the performance of different devices are discussed.Finally, the opportunities and challenges faced by diamond are summarized, and the future development of diamond is prospected.更多还原