【摘要】 通过对硅压阻式压力敏感芯体内部应变电阻失效故障的排查及定位分析，确立了应变电阻缺陷造成传感器失效机理，总结激发应变电阻缺陷暴露的检测方法，确定对压力敏感芯体进行1 200 h常温电老炼的筛选方案。筛选试验结果表明：增加1 200 h常温电老炼后，可剔除由于应变电阻缺陷造成敏感芯体输出漂移的失效元件。更多还原

【Abstract】 Through investigation and localization analysis of internal strain resistor faults in silicon piezoresistive pressure sensitive cores, the sensor failure mechanism caused by strain resistor defects is verified.The detection methods for stimulating strain resistor defects exposing are summarized.Screening scheme for 1 200 h constant temperature electrical aging of pressure sensitive cores body is determined.The screening experimental results show that adding 1 200 h of room temperature electrical aging can eliminate failed components caused by sensitive core body output drift due to strain resistor defects.更多还原