【摘要】 SiC MOSFET广泛应用于高频领域，这使其在半桥电路中极易发生串扰现象。实际情况中，半桥电路上、下桥臂的栅极电阻通常保持一致。然而，现有的串扰研究仅在某一桥臂的栅极电阻为定值的条件下分析另一桥臂中栅极电阻的影响，难以获取实际电路中的串扰特性。研究了SiC MOSFET半桥电路串扰特性，分析了上、下桥臂栅极电阻单独变化与同步变化对串扰的影响规律，并探究了不同共源极电感情况下栅极电阻对串扰电压的影响，最后搭建了动态特性测试平台，实验验证了理论分析的正确性。结果表明，与只改变关断器件的栅极电阻相比，上、下桥臂同步变化时串扰电压的正峰值更小，栅极电阻的取值范围也更宽，为半桥电路中SiC MOSFET的低干扰驱动设计提供了理论参考。更多还原

【Abstract】 SiC MOSFETs are widely used in high-frequency applications, which makes them highly susceptible to crosstalk in half-bridge circuits.In practice, the gate resistances of the upper and lower arms of a half-bridge circuit are usually the same.However, the existing crosstalk studies only analyze the influence of gate resistance in one bridge arm under the condition that the gate resistance of another bridge arm is fixed, and it is difficult to obtain the crosstalk characteristics in the actual circuit.The crosstalk characteristics of SiC MOSFET half-bridge circuits were studied, the influences of individual and synchronous changes of gate resistances of upper and lower arms on crosstalk were analyzed, and the influence of gate resistance on crosstalk voltage under different common source inductances was explored.Finally, a dynamic characteristic test platform was built, and the correctness of the theoretical analysis was verified by experiments.The results show that the positive peak value of the crosstalk voltage is smaller when the upper and lower bridge arms are changed synchronously than when only the gate resistance of the turn-off device is changed, and the value range of the gate resistance is also wider, which provides theoretical reference for the low-interference drive design of SiC MOSFETs in half-bridge circuits.更多还原