节点文献

Recent progress on two-dimensional ferroelectrics:Material systems and device applications

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 范芷薇渠靖媛王涛温滟安子文姜琦涛薛武红周鹏许小红

【Author】 Zhiwei Fan;Jingyuan Qu;Tao Wang;Yan Wen;Ziwen An;Qitao Jiang;Wuhong Xue;Peng Zhou;Xiaohong Xu;Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science,Shanxi Normal University;State Key Laboratory of ASIC&System, School of Microelectronics, Fudan University;

【通讯作者】 薛武红;周鹏;许小红;

【机构】 Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science,Shanxi Normal UniversityState Key Laboratory of ASIC&System, School of Microelectronics, Fudan University

【摘要】 Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field. They have attracted tremendous attention for their extensive applications in non-volatile memory, sensors and neuromorphic computing. However, conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional(2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtained impressive breakthroughs, showing overwhelming superiority. Herein,firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is looked at.

【Abstract】 Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field. They have attracted tremendous attention for their extensive applications in non-volatile memory, sensors and neuromorphic computing. However, conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional(2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtained impressive breakthroughs, showing overwhelming superiority. Herein,firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is looked at.

【基金】 Project supported by the National Key Research and Development Program of China (Grant No. 2022YFB3505301);the National Natural Science Foundation of China (Grant Nos. 12241403 and12174237);the Graduate Education Innovation Project in Shanxi Province (Grant No. 2021Y484)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2023年12期
  • 【分类号】TM221
  • 【下载频次】11
节点文献中: 

本文链接的文献网络图示:

本文的引文网络