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Conductive path and local oxygen-vacancy dynamics:Case study of crosshatched oxides

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【作者】 梁正伟吴平王利晨沈保根王志宏

【Author】 Z W Liang;P Wu;L C Wang;B G Shen;Zhi-Hong Wang;Department of Physics, University of Science and Technology Beijing;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences;Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences;School of Physical Sciences, University of Chinese Academy of Sciences;Ganjiang Innovation Academy, Chinese Academy of Sciences;

【通讯作者】 王志宏;

【机构】 Department of Physics University of Science and Technology BeijingBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of SciencesNingbo Institute of Materials Technology & Engineering Chinese Academy of SciencesSchool of Physical Sciences University of Chinese Academy of SciencesGanjiang Innovation Academy Chinese Academy of Sciences

【摘要】 By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La0.7Sr0.3MnO3 thin films grown onto flat and vicinal LaAlO3(001) single crystal substrates.Consistent with prior studies,the crosshatch topography was observed first by dynamical force microscopy as the epi-stain started to release with increasing film thickness.Second,by using conductive atomic force microscopy(CAFM),conductive crosshatch and dots(locally aligned or random) were unravelled,however,not all of which necessarily coincided with that shown in the in situ atomic force microscopy.Furthermore,the current-voltage responses were probed by CAFM,revealing the occurrence of threshold and/or memristive switchings.Our results demonstrate that the resistive switching relies on the evolution of the local profile and concentration of oxygen vacancies,which,in the crosshatched films,are modulated by both the misfit and threading dislocations.

【Abstract】 By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La0.7Sr0.3MnO3 thin films grown onto flat and vicinal LaAlO3(001) single crystal substrates.Consistent with prior studies,the crosshatch topography was observed first by dynamical force microscopy as the epi-stain started to release with increasing film thickness.Second,by using conductive atomic force microscopy(CAFM),conductive crosshatch and dots(locally aligned or random) were unravelled,however,not all of which necessarily coincided with that shown in the in situ atomic force microscopy.Furthermore,the current-voltage responses were probed by CAFM,revealing the occurrence of threshold and/or memristive switchings.Our results demonstrate that the resistive switching relies on the evolution of the local profile and concentration of oxygen vacancies,which,in the crosshatched films,are modulated by both the misfit and threading dislocations.

【基金】 funded by the Science Center of the National Science Foundation of China (Grant No. 52088101);the National Natural Science Foundation of China (Grant Nos. 11474342 and11174353);the National Key Research and Development Program of China;the Strategic Priority Research Program B of the Chinese Academy of Sciences;supported in part by the beamline 08U1A of SSRF
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2023年04期
  • 【分类号】O469
  • 【下载频次】3
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