【摘要】 从脉冲功率系统优化的角度，提出了漂移阶跃恢复二极管(drift step recovery diodes, DSRD)器件的最优面积选取方法，建立了单开关DSRD驱动电路的线性拟合解析模型；结合SiC材料短空穴寿命的特性，提出了SiC基DSRD驱动电路参数的优化方案；基于该方案研制了采用SiC DSRD的脉冲功率源。实验结果表明，匹配负载为50Ω时，研制的脉冲功率源能输出760 V的峰值电压，脉冲上升沿达810 ps,且不存在单脉冲下的多次触发现象。该脉冲功率源输出脉冲前沿在亚纳秒量级，且波形稳定性好，脉冲源体积小，能应用于小型化超宽带电磁脉冲发生器。更多还原

【Abstract】 In this paper, the optimal area of drift step recovery diodes(DSRD) devices is proposed from the perspective of pulsed power system optimization. Based on the established linear fitting analytical model of a single switch DSRD driving circuit and the characteristics of the short lifetime of silicon carbide(SiC) materials, an optimization scheme for the parameters of SiC-based DSRD driving circuits is proposed, and a pulse power system is implemented using a self-developed/SiC DSRD. The experimental results show that the system can output a peak voltage of 760 V on a matching load of 50 Ω, with a pulse rise front of 810 ps, and there is no multiple triggering under a single pulse. The output pulse front of this pulse power source is in the sub-nanosecond level with a good pulse stability and no secondary pulse generation, and can be applied in miniaturized ultra wideband electromagnetic pulse generators.更多还原