【摘要】 利用射频磁控溅射方法在玻璃和Si(111)衬底上沉积了CdSe薄膜，并研究了不同溅射压强对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明，所有样品均沿(111)面择优生长，晶粒尺寸随溅射压强的增大而减小.透射光谱分析表明，CdSe薄膜在红外光区域具有较大的透射率，薄膜的带隙随溅射压强的增大表现出先增大后减小的趋势.霍尔效应测试表明，随着溅射压强的增加，电阻率出现先增大后减小的趋势，载流子浓度则出现先减小后增大的趋势.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.更多还原

【Abstract】 The cadmium telluride(CdSe) thin films were deposited on glass and Si(111) subtrates by radio frequency(RF) magnetron sputtering, and the influences of sputtering power on the structural, optical and electrical properties of the films were investigated in this paper.The X-ray diffraction patterns reveal that thin films exhibit a preferred orientation along the(111) plane, The grain size decreases with the increase of sputtering pressure.Transmission spectrum analysis shows that the thin CdSe films have a large transmission in the infrared region, and the band gap of CdSe films increases first and then decreases with the increase of sputtering pressure.The Hall effect test shows that with the increase of sputtering pressure, the resistivity increases first and then decreases, while the carrier concentration decreases first and then increases.The results of this study can provide reference for the application of CdSe thin films in photoelectric devices.更多还原