【摘要】 光电导天线作为太赫兹时域光谱仪产生与探测太赫兹辐射的关键部件，具有重要的科研与工业价值。本文采用分子束外延(MBE)方法制备InGaAs/InAlAs超晶格作为1 550 nm光电导天线的光吸收材料，使用原子力显微镜、光致发光、高分辨X射线衍射等方式验证了材料的高生长质量；通过优化制备条件得到了侧面平整的台面结构光电导天线。制备的光电导太赫兹发射天线在太赫兹时域光谱系统中实现了4.5 THz的频谱宽度，动态范围为45 dB。更多还原

【Abstract】 Photoconductive antennas are of great scientific and industrial value as the key components for generating and detecting terahertz radiation in terahertz time-domain spectrometers. In this paper, Molecular Beam Epitaxy(MBE) is utilized to prepare InGaAs/InAlAs superlattices as lightabsorbing materials for 1 550 nm photoconductive antennas. The high growth quality of the materials is verified by Atomic Force Microscopy(AFM), Photoluminescence(PL), and high-resolution X-ray diffraction. The mesa-structured photoconductive antenna with flat sides is obtained by optimizing the preparation conditions. The fabricated photoconductive terahertz transmitting antenna achieves a spectral width of 4.5 THz in a terahertz time-domain spectroscopy system with a dynamic range of 45 dB.更多还原