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Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

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【Author】 Xinlong Dong;Xin Jia;Zhi Yan;Xuemin Shen;Zeyu Li;Zhenhua Qiao;Xiaohong Xu;College of Physics and Information Engineering,Shanxi Normal University;Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education Research Institute of Materials Science,Shanxi Normal University;International Center for Quantum Design of Functional Materials,University of Science and Technology of China;Hefei National Laboratory,University of Science and Technology of China;

【通讯作者】乔振华;许小红;

【机构】 College of Physics and Information Engineering,Shanxi Normal University； Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education Research Institute of Materials Science,Shanxi Normal University； International Center for Quantum Design of Functional Materials,University of Science and Technology of China； Hefei National Laboratory,University of Science and Technology of China；

【摘要】 The van der Waals heterojunctions,stacking of different two-dimensional materials,have opened unprecedented opportunities to explore new physics and device concepts.Here,combining the density functional theory with non-equilibrium Green’s function technique,we systematically investigate the spin-polarized transport properties of van der Waals magnetic tunnel junctions （MTJs）,Cu/MnBi₂Te₄/MnBi₂Te₄/Cu and Cu/MnBi₂Te₄/hBN/n·MnBi₂Te₄/Cu （n=1,2,3）.It is found that the maximum tunnel magnetoresistance of Cu/MnBi₂Te₄/hBN/3·MnBi₂Te₄/Cu MTJs can reach 162.6%,exceeding the system with only a single layer MnBi₂Te₄.More interestingly,our results indicate that Cu/MnBi₂Te₄/h-BN/n·MnBi₂Te₄/Cu （n=2,3） MTJs can realize the switching function,while Cu/MnBi₂Te₄/h-BN/3·MnBi₂Te₄/Cu MTJs exhibit the negative differential resistance.The Cu/MnBi₂Te₄/h-BN/3·MnBi₂Te₄/Cu in the parallel state shows a spin injection efficiency of more than 83.3%.Our theoretical findings of the transport properties will shed light on the possible experimental studies of MnBi₂Te₄-based van der Waals magnetic tunneling junctions.更多还原

【Abstract】 The van der Waals heterojunctions,stacking of different two-dimensional materials,have opened unprecedented opportunities to explore new physics and device concepts.Here,combining the density functional theory with non-equilibrium Green’s function technique,we systematically investigate the spin-polarized transport properties of van der Waals magnetic tunnel junctions （MTJs）,Cu/MnBi₂Te₄/MnBi₂Te₄/Cu and Cu/MnBi₂Te₄/hBN/n·MnBi₂Te₄/Cu （n=1,2,3）.It is found that the maximum tunnel magnetoresistance of Cu/MnBi₂Te₄/hBN/3·MnBi₂Te₄/Cu MTJs can reach 162.6%,exceeding the system with only a single layer MnBi₂Te₄.More interestingly,our results indicate that Cu/MnBi₂Te₄/h-BN/n·MnBi₂Te₄/Cu （n=2,3） MTJs can realize the switching function,while Cu/MnBi₂Te₄/h-BN/3·MnBi₂Te₄/Cu MTJs exhibit the negative differential resistance.The Cu/MnBi₂Te₄/h-BN/3·MnBi₂Te₄/Cu in the parallel state shows a spin injection efficiency of more than 83.3%.Our theoretical findings of the transport properties will shed light on the possible experimental studies of MnBi₂Te₄-based van der Waals magnetic tunneling junctions.更多还原

【关键词】 tunneling； unprecedented； systematically； polarized； tunnel； exceeding； stacking； switching； Tunnel； opened；

【基金】 supported the National Key Research and Development Program of China(Grant No. 2022YFB3505301);the Natural Science Basic Research Program of Shanxi (Grant Nos. 20210302124252 and 202203021222219)

【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2023年08期

【分类号】O469
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