A Ferroelectric Domain-Wall Transistor

【摘要】 On the basis of novel properties of ferroelectric conducting domain walls, the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density, high-speed and energy-efficient nanodevices. For in-memory computing, three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required. Here, a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O₃ thin films. For the logic function, the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source electrodes. For the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations, providing an innovative approach for the development of the domain wall nanoelectronics.更多还原

【Abstract】 On the basis of novel properties of ferroelectric conducting domain walls, the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density, high-speed and energy-efficient nanodevices. For in-memory computing, three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required. Here, a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O₃ thin films. For the logic function, the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source electrodes. For the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations, providing an innovative approach for the development of the domain wall nanoelectronics.更多还原