【摘要】 报道一种新型的免掺杂电子传输材料——TiC_xO_y,具有非晶相为主少量晶化相的混合相结构,约4.1 eV的低功函数和2.63 eV的宽带隙,可实现对电子的零势垒传输和对空穴的高势垒(1.64 eV)阻挡;TiC_xO_y/n型硅异质接触可获得17.74 mΩ·cm~2的低接触电阻率,可实现对电子的选择性输运功能。TiC_xO_y薄膜用作全背面n型硅异质结电池的电子传输层,可大幅提高电池的开路电压和填充因子,最优电池的绝对效率提高3%。更多还原

【Abstract】 This article reports TiC_xO_y as a novel dopant-free electron-transport material. TiC_xO_y is a mixed-phase material which is composed of the dominant amorphous phase and a small proportion of crystalline phase. TiC_xO_y material has a low work function of about 4.1 eV and a wide bandgap of 2.63 eV,realizing 0 eV energy barrier for electrons transport and high blocking energy barrier of 1.64 eV for holes transport. A low contract resistivity of 17.74 mΩ·cm~2 has been realized for TiC_xO_y/n-Si heterocontact,realizing the function of electron-selective transport. TiC_xO_y thin film was applied for the full-area,rear-side electron-transport layer of n-type silicon heterojunction solar cell. As a result,the introduction of TiC_xO_y thin film significantly increases open-circuit voltages and fill factors of solar cells,and the absolute conversation efficiency of champion solar cell is promoted by 3%.更多还原