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化合物PbGa4Se7中[PbSe3]和[GaSe4]功能基元的强极化实现高的相位匹配二次谐波效应(英文)
Remarkable phase-matchable second-harmonic generation realized by strong polarities of [PbSe3] and [GaSe4] functional motifs in PbGa4Se7
【摘要】 二次谐波效应和相位匹配能力对于二阶非线性光学晶体的实际应用至关重要.在本工作中,我们通过将具有立体化学活性电子对的Pb2+引入非相位匹配的Ga2Se3,增强其各向异性和二阶超极化率.基于以上策略,我们制备了一种硒化物PbGa4Se7,其晶体结构由类金刚石阴离子骨架和插入到间隙中的Pb2+组成.在1910 nm的激光照射下,PbGa4Se7具有大的二次谐波系数(3.3×AgGaS2);同时,其具有低的热膨胀系数各向异性(0.5)和合适的光学带隙(2.1 eV),在2090 nm激光照射下,表现出高的激光诱导损伤阈值(7.0×AgGaS2).PbGa4Se7的相位匹配能力和强二次谐波效应可归因于非线性光学功能基元(四面体GaSe4和金字塔PbSe3结构单元)的协同作用产生了额外的各向异性和极化率.
【Abstract】 Strong second-harmonic generation(SHG) and phase-matchable capability at specific transmittance windows are crucial to the real application of nonlinear optical crystals.Herein,an efficient strategy of introducing Pb2+with stereochemically active lone-pair electrons into non-phase-matchable Ga2Se3 via enhancing the anisotropy microstructure is first applied to meet phase-matchable SHG intensity requirements,offering a selenide,namely,PbGa4Se7,which is designed and synthesized with a diamond-like anionic framework,where Pb2+cations reside in a parallel arrangement.As expected,PbGa4Se7 possesses a large SHG coefficient of 3.3times that of AgGaS2 under the incident laser of 1910 nm.Moreover,PbGa4Se7 displays a high laser-induced damage threshold of 7.0 times that of AgGaS2 at 2090 nm,which originates from the low anisotropy of thermal expansion coefficient(0.36) and suitable optical band gap(2.1 eV).Theoretical calculations demonstrate that the considerable phase-matchable SHG response of PbGa4Se7 can be attributed to the synergies of tetrahedral GaSe4 and pyramid PbSe3microstructural blocks with additional anisotropy and polarizability.
【Key words】 chalcogenide; nonlinear optical material; second-harmonic generation; phase matchability; structure and property relationship;
- 【文献出处】 Science China(Materials) ,中国科学:材料科学(英文版) , 编辑部邮箱 ,2023年07期
- 【分类号】O734;TB34
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