【摘要】 宽禁带半导体材料碳化硅(SiC)凭借着其高击穿场强、高热导率、耐高温、高化学稳定性和抗辐射等优异性能，在电力电子器件领域尤其是高温、高频、高功率等应用场景下有着巨大潜力。大尺寸、高质量、低成本的单晶SiC的制备是SiC相关半导体产品规模化应用的前提。顶部籽晶溶液生长(TSSG)法生长的单晶SiC有着晶体质量高、易扩径、易p型掺杂等优势，有望成为制备单晶SiC的主流方法。但目前由于该方法涉及的生长机理复杂，研究者对其内部机理的理解还不够充分，难以对TSSG生长设备和方法进行有效的改进与优化。利用计算机对TSSG法生长单晶SiC生长过程进行数值模拟被认为是对其内部机理探究的有效途径之一。本文首先回顾了TSSG法生长单晶SiC和相关数值模拟分析的发展历程，介绍了TSSG法生长单晶SiC和数值模拟的基本原理，然后介绍了数值模拟方法计算分析TSSG法生长单晶SiC模型涉及的主要模块、影响单晶生长的主要因素(如马兰戈尼力、浮力、电磁力等),以及对数值模型的优化方法。最后，指出了数值模拟方法计算分析TSSG法生长单晶SiC在未来的重点研究方向。更多还原

【Abstract】 As a wide bandgap semiconductor, silicon carbide(SiC) has great potential in the applications of high-power, high-temperature and high-frequency power electronics owing to its excellent properties such as high breakdown electric field, high thermal conductivity, high thermal and chemical stability, and radiation resistance. The prerequisite of the widespread applications of SiC devices is to obtain large-size, high-quality and low-cost single crystal SiC. The single crystal SiC prepared by top-seeded solution growth(TSSG) method has the advantages of high crystal quality, easy diameter expansion and easy p-type doping. However, the key issue of this method is its complex growth mechanism, which has not been well understood, and it is difficult for researchers to effectively improve and optimize TSSG growth equipment and methods. Numerical simulation is considered as an effective way to explore single crystal SiC growth by TSSG method. Firstly, the fundamentals of single crystal SiC grown by TSSG method and the related numerical simulations are introduced. Main factors such as Marangoni force, buoyancy force and electromagnetic force affecting single crystal SiC growth are discussed together with the optimization of the numerical models. Finally, the key directions of the future research on the TSSG of single crystal SiC are proposed.更多还原