【摘要】 金刚石优异的物理性质使其成为下一代最有发展潜力的半导体材料之一。目前来看，基于微波等离子体化学气相沉积的异质外延可能是未来制备大尺寸单晶金刚石的最佳方法。在过去的三十年间，铱复合衬底上异质外延生长单晶金刚石取得了一定进展，特别是近几年实现了2英寸(1英寸=2.54 cm)以上的大尺寸自支撑单晶金刚石的生长。本文总结了金刚石异质外延用的衬底，简要介绍了异质衬底上的偏压增强成核，详细介绍了目前最成功的铱/氧化物、铱/氧化物层/硅复合衬底，最后对金刚石异质衬底和异质外延进行了总结，指出目前存在的问题并给出了一些可能的解决思路。更多还原

【Abstract】 The excellent physical properties of diamond make it one of the most promising semiconductor materials for the next generation. At present, heteroepitaxy based on microwave plasma chemical vapor deposition may be the best method for preparing large-scale single crystal diamond in the future. In the past three decades, some progress has been made in the heteroepitaxial growth of single crystal diamond on iridium-based composite substrates, especially in recent years, the growth of large-scale single crystal diamond of more than 2 inch has been realized. This paper summarizes the various substrates used for diamond heteroepitaxy, briefly introduces bias-enhanced nucleation on heterogeneous substrates, and details the most successful iridium/oxide, iridium/oxide layer/silicon composite substrates. In the end, the problems existing in diamond heterogeneous substrates and heteroepitaxy are summarized, and some possible solutions are given.更多还原