【摘要】 二维超宽禁带半导体材料六方氮化硼(h-BN)具有绝缘性好、击穿场强高、热导率高，以及良好的稳定性等特点，且其原子级平整表面极少有悬挂键和电荷陷阱的存在，使其有潜力成为二维电子器件的衬底和栅介质材料。实现h-BN应用的关键在于生长高质量的h-BN单晶薄膜，本文详细介绍了在过渡金属衬底、绝缘介质衬底和半导体材料表面外延生长h-BN的方法及其研究进展。在具有催化活性的过渡金属衬底(铜、镍、铁、铂等)上可以外延得到高质量的二维h-BN,而在绝缘介质或半导体材料衬底上直接生长h-BN单晶薄膜更具挑战性。蓝宝石以其良好的热稳定性和化学稳定性成为外延h-BN的首选衬底，蓝宝石衬底上生长h-BN薄膜的方法主要有化学气相沉积、分子束外延、离子束溅射沉积、金属有机气相外延，以及高温后退火等，通过这些方法可以在蓝宝石衬底上外延得到h-BN单晶薄膜，还可以集成到现有的一些III-V族化合物半导体的外延生长工艺之中，为h-BN的大面积应用奠定基础。此外，石墨烯、硅和锗等半导体材料衬底上生长h-BN单晶薄膜也是当前研究的一个热点，这为基于h-BN的异质结制备及其应用提供了新的方向。更多还原

【Abstract】 As an ultrawide band gap semiconductor, two-dimensional(2D) hexagonal boron nitride(h-BN) has attracted considerable research interest because of its unique properties such as excellent electrical insulation, high breakdown field, high thermal conductivity, and good chemical inertness, which make it a promising candidate as dielectric and substrate layers for devices based on other 2D materials. The synthesis of high-quality and large-area h-BN layers with few defects is strongly desirable for these applications. In this review, the methods and progress of the epitaxial growth of 2D h-BN on transition metal, h-BN films on dielectric and semiconductor substrates are described in detail. The high-quality 2D h-BN layers can be epitaxially grown on the transition metal substrates with catalytic activity including Cu, Ni, Fe, Pt, etc. However, it is a great challenge to directly grow h-BN single crystal films on insulating dielectric or semiconductor substrates. Sapphire is a preferred substrate for the growth of h-BN for its good thermal stability and chemical stability. The growth of h-BN thin films on sapphire substrate has been widely reported by various techniques, such as chemical vapor deposition, molecular beam epitaxy, ion beam sputtering deposition, metal-organic vapor phase epitaxy, high-temperature post-annealing and so on. Based on these techniques, high-quality 2D h-BN has been prepared on sapphire substrates, it can also be integrated into the epitaxial growth processes of some existing III-V compound semiconductors, laying the foundation for the large-scale application of h-BN. In addition, the growth of h-BN single crystal films have also been attempted on semiconductor substrates like graphene, silicon and germanium, which provide an attractive strategy for the fabrication and application of h-BN-based heterojunctions.更多还原