【摘要】 Si衬底因兼具大尺寸、低成本以及与现有CMOS工艺兼容等优势，使Si衬底上GaN基射频(RF)电子材料和器件成为继功率电子器件之后下一个该领域关注的焦点。由于力学性质与低阻Si衬底不同，高阻Si衬底上GaN基外延材料生长的应力控制和位错抑制问题仍然困难，且严重的射频损耗问题限制着其在射频电子领域的应用。本文简要介绍了Si衬底上GaN基射频电子材料的研究现状和面临的挑战，重点介绍了北京大学研究团队在高阻Si衬底上GaN基材料射频损耗的产生机理，以及低位错密度、低射频损耗GaN的外延生长等方面的主要研究进展。最后对Si衬底上GaN基射频电子材料和器件的未来发展作了展望。更多还原

【Abstract】 Due to the advantages of both large size, low cost, and compatibility with existing CMOS processes, GaN based ratio frequency(RF) electronic materials and devices on Si substrates have become the next focus of attention in this field after power electronic devices. Due to the different mechanical properties of high-resistivity Si substrates, it is still difficult to control stress and suppress dislocations in the growth of GaN based epitaxial materials on high-resistivity Si substrates, as well as address serious RF loss issues that limit their applications in the field of RF electronics. This work briefly introduces the research status and challenges of GaN based RF electronic materials on Si substrates, focusing on the main research progress of the Peking University research team in the formation mechanism of RF loss, epitaxial growth of GaN on high-resistivity Si substrates with low dislocation density and low RF loss. Finally, the future development of GaN based RF electronic materials and devices on Si substrates is prospected.更多还原