【摘要】 外尔半金属Co₃Sn₂S₂是一种新型的拓扑量子材料，具有独特的拓扑能带结构，被认为是一种非常有潜力的自旋电子材料，而制备电子器件的重要一步是该材料的薄膜化.采用磁控溅射方法分别在Si O₂（300 nm）/Si（100）和Al₂O₃（0001）衬底上生长Co₃Sn₂S₂薄膜.X射线衍射（XRD,X-ray Diffraction）显示Co₃Sn₂S₂薄膜的结构随厚度而变化.在不同衬底上，Co₃Sn₂S₂薄膜的生长情况也不同，较薄的Co₃Sn₂S₂ （<200 nm）适合生长在Al₂O₃（0001）衬底上，而较厚的Co₃Sn₂S₂ （～5μm）适合生长在Si O₂（300 nm）/Si（100）衬底上.Co₃Sn₂S₂纵向电阻率随着厚度的增加而增加，对导电起主要作用的表面层厚度保持在一定尺度内.更多还原

【Abstract】 Weyl semi-metallic Co₃Sn₂S₂ is a new type of topological quantum material with a unique topological band structure,which is considered to be a very potential spintronic material,and an important step in the preparation of electronic devices is the thin-film of the material.In this paper,the magnetron sputtering method is used to grow Co₃Sn₂S₂ films on SiO₂（300 nm）/Si（100） and Al₂O₃（0001） substrates,respectively.X-ray diffraction （XRD,X-ray diffraction） shows that the structure of Co₃Sn₂S₂ films change with the change of thicknes.The growth quality of Co₃Sn₂S₂ films is different for different substrates,thinner Co₃Sn₂S₂ （<200 nm） is suitable for growing on Al₂O₃（0001） substrates,while thicker Co₃Sn₂S₂ （about5μm） is suitable for growing on Si O₂（300 nm）/Si（100） substrates.The longitudinal resistivity of Co₃Sn₂S₂ also increases with the increase of thickness,and the thickness of the surface layer,which plays the main role of conductivity,remains at a certain scale.更多还原