【摘要】 设计了一种基于高阶温度补偿与内建负反馈稳压技术的带隙基准，所设计的带隙基准具有低温漂和高PSRR的优点。通过采用两对工作在亚阈值区的MOS管，根据不同工作温度分段产生指数型补偿电流，形成高阶温度补偿，降低了带隙基准的温度系数。基于带隙基准输出电压，通过内建负反馈稳压电路，提高了带隙基准的电源抑制能力。基于Dongbu 0.18μm BCD工艺，完成了低温漂高PSRR带隙基准的设计、版图绘制和后仿真验证。带隙基准的版图面积为290μm×200μm。后仿真结果表明，所设计的带隙基准在-45～125℃范围内温度系数仅为1.15×10^-6/℃,电源抑制比为83.22 dB;在2.8～5.5 V电源电压变化下，基准电压的平均值为1.212 V,线性调整率为0.015%。更多还原

【Abstract】 A bandgap reference with high-order temperature compensation and built-in negative feedback voltage regulation was designed. Low temperature drift and high PSRR were achieved in the proposed bandgap reference. By using two pairs of MOS transistors working in the subthreshold region, the exponential compensation current was generated according to different operating temperature, which resulted in a high-order temperature compensation and hence reduced the temperature coefficient of the bandgap reference. Based on the output voltage of the bandgap reference, the power supply rejection capability of the bandgap reference was improved by building a negative feedback voltage regulator. Based on the Dongbu 0.18 μm BCD process, a low-temperature-coefficient and high-PSRR bandgap reference was completed. The layout area of the proposed bandgap reference was 290 μm×200 μm. The post simulation results show that the temperature coefficient is only 1.15×10^-6/℃ in the temperature range of-45 ℃ to 125 ℃, and the PSRR reaches 83.22 dB. The average output voltage is 1.212 V and the line sensitivity is 0.015% in the supply range of 2.8-5.5 V.更多还原