【摘要】 瞬态电压抑制器(TVS)是一种二极管形式的接口保护器件，其中低压TVS通常由低阻外延层和其表面的高浓度掺杂区构成。在芯片制造工艺过程中，圆片的表面掺杂浓度对器件特性有很大的影响，非正常的杂质扩散变化极易导致器件参数异常。文章就某低压TVS制造过程中出现的参数异常进行了排查，确认异常原因为表面掺杂浓度过高，并就表面掺杂浓度与器件参数的变化趋势进行了分析，并通过实验得到验证。更多还原

【Abstract】 Transient voltage suppressor(TVS) is an interface protection device in the form of a diode, in which a low-voltage TVS is usually composed of a low-resistance epitaxy and a high-concentration doped region on its surface. During the chip manufacturing process, the surface doping concentration of the wafer has a great influence on the device characteristics, and abnormal impurity diffusion changes can easily lead to abnormal device parameters. This paper investigates and confirms the abnormal parameters in the manufacturing process of a low-voltage TVS. It is confirmed that the abnormality is caused by the high surface doping concentration, and the trends of the surface doping concentration and device parameters are analyzed and verified by experiments.更多还原