【摘要】 采用电沉积辅助溶胶-凝胶法在FTO导电玻璃基片上制备了V₂O₅薄膜，研究了前驱体浓度对V₂O₅薄膜结构、形貌及光学性能的影响。XRD和XPS结果显示，制备的薄膜均为V₂O₅薄膜，XRD图谱中的衍射峰较为尖锐，薄膜具有良好的结晶性；图谱中未出现其他杂质峰，V₂O₅薄膜纯度较高。SEM形貌结果表明，V₂O₅薄膜表面均匀致密，主要由紧密排列的小颗粒组成。UV/VIS/NIR测试结果表明，前驱体浓度对薄膜透射率影响较大，前驱体浓度1∶100时V₂O₅膜透射率最佳，可达80.18%。红外光谱测试结果表明，相变前后V₂O₅薄膜的红外透过率由低温半导体态时的89.5%降至高温金属态时的20.5%。更多还原

【Abstract】 V₂O₅ thin films were prepared on FTO conductive glass substrates by electrodeposition-assisted sol-gel technique, and effects of precursor concentration on the structure, morphology and optical properties of V₂O₅ thin films were investigated. The results of XRD and XPS show that the prepared films are all V₂O₅ films, and the diffraction peaks in the XRD pattern are sharp, indicating that the films have good crystallinity. No other impurity peaks appeared in the XRD and XPS spectra, which indicated that the prepared V₂O₅ film had high purity. The results of SEM show that the surface of V₂O₅ film is uniform and compact, and mainly consists of spaced small particles. UV/VIS/NIR test results indicate that the transmittance of V₂O₅ thin film is greatly affected by the concentration of precursor, and reaches the highest of 80.18% when the concentration of precursor is 1∶ 100. The infrared spectrum test result shows that the infrared transmittance of V₂O₅ thin film decreases from 89.5% to 20.5%, as its semiconductor state at low temperature changes to metal state at high temperature.更多还原