【摘要】 在多线锯切片加工中，由于蓝宝石晶体材料的各向异性，不同加工位置处的力学性能不同，导致金刚石线锯在垂直进给方向上产生偏移，从而造成切片加工晶片面形偏差。为深入研究晶体各向异性对切片加工晶片面形偏差的影响机制，通过分析蓝宝石晶体材料的特性，并计算常用晶面弹性模量分布情况，结合线锯受力情况模拟，计算晶片的面形偏差，分析工艺参数对面形偏差的影响。结果表明：C面、A面和M面晶片面形偏差不受蓝宝石各向异性的影响；R面晶片切片加工时，可选择切片进给角度为90°或270°以获得较小晶片面形偏差；减小比进给速度或采用变速进给方法可降低晶片面形偏差。更多还原

【Abstract】 Due to the anisotropy of sapphire crystal material, the mechanical properties vary in multi-wire saw slicing based on different cutting positions. This variation leads to the deviation of the diamond wire in the vertical feed direction, resulting in the surface shape deviation of the sapphire wafers. To further investigate the influence of crystal anisotropy on the surface shape deviation of the wafer, the properties of sapphire crystal material were analyzed, and the distribution of the elastic modulus of its common crystal surfaces was calculated. By simulating the sawing force, the surface shape deviation of the wafer was calculated, and the influence of process parameters on the surface shape deviation was analyzed. The results show that the surface shape deviations of wafers cut from the C-plane, A-plane, and M-plane are not affected by the anisotropy of sapphire. A feed angle of 90° or 270° can be selected to obtain a small surface shape deviation during the slicing process of the R-plane. Additionally, reducing the specific feed rate or adopting the variable speed feed method can reduce the wafer’s surface shape deviation.更多还原