【摘要】 阐述关键工序结对准工艺的实验研究，制备1 310nm的EML器件。先使用电感耦合等离子体（ICP）进行表层材料刻蚀，通过优化刻蚀气体比例和功率等工艺参数，得到垂直度较高，表面光滑的刻蚀条件。接着使用InGaAsP选择腐蚀液，通过改变湿法腐蚀工艺的浓度配比和腐蚀条件，最终得到侧壁平滑的结构，为多次外延提供了基础。采用该结对准工艺制备的1 310nm EML器件，室温下阈值电流为12mA，斜率效率为0.25W/A,100mA下的输出功率为22mW，消光比为13dB。更多还原

【Abstract】 This paper expounds the experimental research on the key process of junction alignment technology and the preparation of 1 310nm EML devices. First, Inductively coupled plasma(ICP) was used to etch the surface material. By optimizing the etching gas ratio and power and other process parameters, the etching conditions with high perpendicularity and smooth surface were obtained. Next, InGaAsP was used to select the corrosion solution, and by changing the concentration ratio and corrosion conditions of the wet corrosion process, a smooth sidewall structure was ultimately obtained, providing a foundation for multiple epitaxy. The 1 310nm EML device fabricated by this junction alignment process has a threshold current of 12mA at room temperature,a Slope efficiency of 0.25W/A, an output power of 22mW and an extinction ratio of 13dB at 100mA.更多还原