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超宽禁带半导体NaYO2的光电性质的第一性原理研究(英文)
Optoelectronic Properties of Ultra-Wide-Bandgap Semiconductor NaYO2:A First-Principles Study
【摘要】 超宽禁带半导体在发展电了器件的性能方面具有巨大潜力.本文利用密度泛函理论和精确的屏蔽杂化泛函计算了两种不同相的NaYO2的电了和光学性质.电了结构计算结果表明,NaYO2的单斜相和三方相都表现为直接带隙,大小分别5.6 eV和5.4 eV,超越了公认的金刚石和GaN半导体材料,为半导体行业提供了一个物理上现实的材料平台.研究了NaYO2两相的光学性质,发现它们在红外和可见光区都是透明的.因此,NaYO2可被用作红外窗口材料.
【Abstract】 Ultra-wide-bandgap semiconductors have tremendous potential to advance electronic devices, as device performance improves nonlinearly with increasing gap. In this work we employ densityfunctional theory with the accurate screened-hybrid functional to evaluate the electronic and optical properties of Na YO2in two different phases. The electronic structure calculation results show that both monoclinic and trigonal phases of Na YO2exhibit direct bandgaps of 5.6e V and 5.4 e V, respectively, offering a physically realistic material platform to derive the semiconductor industry beyond the well-established diamond and Ga N semiconducting materials. Next, we investigate the optical properties and reveal that both phases of Na YO2are transparent in the infrared and visible regions, thereby, these materials can be used as infrared window materials.
【Key words】 NaYO2; First-principles calculation; Electronic structure; Optical property;
- 【文献出处】 Chinese Journal of Chemical Physics ,化学物理学报(英文版) , 编辑部邮箱 ,2023年02期
- 【分类号】TQ131.12;TN304