【摘要】 嵌段共聚物光刻胶引导自组装是先进制程半导体制造的候选方案之一。第一代嵌段共聚物光刻胶的典型代表是聚苯乙烯-聚甲基丙烯酸甲酯二嵌段共聚物，受限于自身较低的相互作用参数（χ）,最小半周期（0.5L₀）为11 nm。第二代嵌段共聚物光刻胶的特征是具有高相互作用参数（实现10 nm以下图案化）,但是由于两个嵌段的表面能（γ）差异较大，需要引入额外的溶剂退火或者涂层工艺。为了解决上述问题，国内外学者发展了第三代嵌段共聚物光刻胶，不仅具有较高的相互作用参数，还具有接近的表面能（高χ近γ）,适用于工业友好的热退火工艺引导自组装。最近，基于材料基因组计划概念，将多种共变特性赋予单一材料的第四代嵌段共聚物光刻胶问世，可以实现高通量合成建立嵌段共聚物库，通过调控χ和χN满足不同的应用场景（0.5L₀=4～10 nm）,还可以免除热退火工艺中涂覆中性层步骤，简化了工艺流程。本文总结了第三代和第四代先进嵌段共聚物光刻胶的设计，并且对相关领域存在的挑战与机遇进行了探讨和展望。更多还原

【Abstract】 Directed self-assembly（DSA） of block copolymer（BCP） has been identified as the potential strategy for the next-generation semiconductor manufacturing. The typical representative of the first generation（G1） of block copolymer for nanolithography is polystyrene-block-polymethylmethacrylate（PS-b-PMMA）. DSA of PS-b-PMMA enables limited half pitch（0.5L₀） of 11 nm due to the low Flory-Huggins interaction parameter（χ）. The second generation（G2） of BCP is developed with the feature of high χ. Solvent anneal or top-coat is employed for the G2 BCP to form the perpendicular lamellae orientation. Towards industry friendly thermal anneal, high χ BCP with equal surface energy（γ） is reported as the third generation（G3） BCP. Recently, based on Materials Genome Initiative（MGI） concept, optimized design of block copolymers with covarying properties（G4） for nanolithography is presented to meet specific application criteria. G4 BCP achieves not only high χ and equal γ, but also high throughput synthesis, 4～10 nm half pitch patterns, and controlled segregation strength. This review focuses on the advanced design of G3 and G4 BCP for nanolithography. Moreover, the challenges and opportunities are discussed for the further development of DSA of BCP.更多还原