【摘要】 针对太赫兹波段固态大功率应用需求，基于氮化镓功率放大器单片集成电路（Monolithic Microwave Integrated Circuit,MMIC），采用功率合成技术实现了太赫兹波段瓦级功率输出。通过太赫兹波段微带/波导转换结构和键合金丝补偿技术，结合E面T型结二路合成功率分配/合成器，将两片MMIC封装成最大输出功率为160 mW的功率单元模块。在此基础上，采用八路E面合成器设计了频率覆盖180～238 GHz的十六路功率合成放大器。在漏极电压为+10 V时，带内输出功率大于300 mW,189 GHz输出功率达到了1.03 W。更多还原

【Abstract】 With the application demands of solid-state high power in the terahertz(THz) band, a THz-band watt-level power output is achieved by adopting GaN power amplifier(PA) MMIC and power combining technology. Microstripwaveguide transition, and the low-loss interconnection based on the gold wire compensation are used to package a PA module composed of two PA MMICs and an E-plane T-junction two-way power splitter/combiner. Maximum output power of 160 mW is achieved. Based on the module and an eight-way E-plane combiner, a sixteen-way power combining amplifier is designed across the frequency range of 180 to 238 GHz. Output power of more than 300 mW is achieved with +10 V drain voltage, and the maximum power is 1. 03 W at 189 GHz.更多还原