【摘要】 提高红外探测器的工作温度对于减小红外系统的尺寸、重量和功耗至关重要，进而实现结构紧凑和成本低廉的红外系统。昆明物理研究所多年来对掺铟和砷离子注入技术的HgCdTe p-on-n技术进行了优化，实现了性能优异的中波红外探测器的研制。本文报道了高工作温度中波1024×768@10μm红外焦平面阵列探测器的最新结果，并介绍了在150 K工作温度下的器件性能。结果标明，器件在150 K下截止波长为4.97μm，并测得了不同工作温度下的NETD、暗电流和有效像元率。此外，还展示了在150 K的工作温度下焦平面器件的红外图像，并呈现了99.4%的有效像元率。更多还原

【Abstract】 Increasing the operating temperature for infrared detectors is critical to reduce the size, weight and power of infrared( IR) systems. Such systems are essential to implement a compact and low-cost production of IR systems. For the Kunming Institute of Physics( KIP), HgCdTe standard p-on-n technology with indium doping and arsenic ion implantation technology has been optimized for many years and mid-wavelength IR( MWIR) detectors with excellent electro-optical performance were realized. This paper reports the latest results of the MWIR focal plane array( FPA) detector with a high operating temperature( HOT). Performances of the 1024×768@10 μm pitch MW detector working above 150 K were presented. The detector presenting a cut-off wavelength above 4. 97 μm at 150 K has been developed. The noise-equivalent temperature difference( NETD), dark current and operability at different operating temperatures were attained. Additionally, the IR image taken with the MWIR HgCdTe-based FPA and processed at an operating temperature of 150 K was presented and retained an operability of 99. 4%.更多还原