【摘要】 基于THB–151N光刻胶的微电铸工艺制作了一种阶梯型铜微柱阵列。针对THB–151N光刻胶显影过程中20μm微盲孔显影困难和底部留膜的问题，提出了一种基于浸没式双向兆声波辅助的显影方法。仿真研究了兆声功率密度和微盲孔深宽比对显影液传质过程的影响。优选了兆声功率密度和微盲孔深宽比，并开展了兆声辅助显影的试验研究。同时，针对THB–151N胶膜因曝光剂量选择不当导致微盲孔侧壁垂直度差的问题，通过光刻试验分析了曝光剂量对微盲孔侧壁垂直度的影响，拟合出曝光剂量与胶膜厚度的经验方程。在上述工艺方法和试验研究的基础上，制作出高度300μm、整体高宽比达15∶1、最小边长20μm、4×6的阶梯型铜微柱阵列。更多还原

【Abstract】 In this paper, a stepped copper microcolumn array was fabricated based on the micro-electroforming process of THB–151N photoresist. In order to solve the problem of difficult development of 20 μm micro-blind hole and film retention at the bottom during THB–151N photoresist development, a submerged bidirectional megasonic assisted development method was proposed. The influence of megasonic power density and aspect ratio of micro-blind hole on mass transfer process of developer was simulated. The megasonic power density and aspect ratio of micro-blind hole were optimized, and the megasonic assisted development was studied experimentally. At the same time, aiming at the poor verticality of sidewall of the micro-blind hole due to inappropriate exposure dose of THB–151N film,the effect of exposure dose on the verticality of sidewall of the micro-blind hole was discussed by lithography experiment,the empirical equation of preferred exposure dose and film thickness was fitted. On the basis of the above technological methods and experimental study, 4×6 stepped copper microcolumn arrays with a height of 300 μm, overall aspect ratio of 15∶1 and minimum side length of 20 μm were fabricated.更多还原